SiC heating element

Silicon carbide (SiC), also known as carborundum, is a hard compound containing silicon and carbon. As a semiconductor, silicon carbide particles can be combined through sintering to form a very hard ceramic, hardness approaching that of diamond.

Silicon carbide heating elements, also known as globar sic heating elements or silicon carbide rods, are rod-shaped non-metal high-temperature heating elements made of high-quality green silicon carbide as the main raw material, processed, returned, high-temperature silicified and recrystallized.

 

Features

Accepts significantly higher electrical loadings than metallic

elements

Considerable savings in furnace construction cost

Maintenance is greatly simplified

Available in multi-leg derivative

Advantage

Silicon carbide heating element is a time trusted heating element. It has the advantages of small hot-end resistance, long service life, and energy saving.Silicon Carbide heating elements are available in eight different basic configurations that extend heater life especially in corrosive environments.

Specification

Material	Silicon Carbide(SIC)
Temperature	200 ℃~1625 ℃ (392℉ – 2957℉)
Diameters	10 mm – 55 mm
Hot zones	Max 4.2 m
Lengths	100 mm – 6 m
Shape	slot type, U type, SGR type, SG type, M type, ED type, DB type
Coating	Alkali resistant Coating, A Coating, B Coating

 

Physical Properties of Silicon Carbide Heating Elements

Specific gravity	2.6~2.8g/cm³	Bend strength	>300kg
Hardness	>9MOH’S	Tensile strength	>150Kg.cm³
Porosity rate	<30%	Radiancy	0.85
Thermal Conductivity	14-19W/m·℃ (1000℃)	Specific Heat	1.0kj/kg·℃ (25~1300℃)
Rupture Strength	50Mpa(25℃)	Coefficient Of Thermal Expansion	4.5x 10-5

 

Temperature

Silicon carbide (SiC) heating elements can withstand temperatures up to 1625℃(2957℉), making them ideal for high-temperature applications. We offer a variety of standard sizes and geometries, as well as custom designs to meet specific requirements for various processes and equipment.

 

Electrical characteristics

sic heating elements has rather large specific resistance. When it is heated in air and the surface temperature of the hot zone reaches 1050℃(2732℉), its resistance rate is 600-1400 mm²/m. Its resistance value changes as the temperature rises.

From room-temperature to 800℃(1472℉) is negative value, over 800℃ is positive value nature curve.

All silicon carbide elements gradually increase in resistance during their life in operation and the rate at which this occurs is affected by the following factors:

Element type

Element Specific Loading (W/cm²)

Operating Temperature

Process Atmosphere

Mode of operation – continuous or intermittent

Operating practices

 

Specification and range of resistance:

 

Diameter (OD mm)	Length of hot zone (HZ mm)	Length of cold zone (CZ mm)	Overall length (OL mm)	Range of resistance (ohms)
8	100-300	60-200	240-700	2.1-8.6
12	100-400	100-350	300-1000	0.8-5.8
14	100-500	150-350	400-1200	0.7-5.6
16	200-600	200-350	600-1300	0.7-4.4
18	200-800	200-400	600-1600	0.7-5.8
20	200-800	250-600	700-2000	0.6-6.0
25	200-1200	250-700	700-2600	0.4-5.0
30	300-2000	250-800	800-3600	0.4-4.0
35	400-2000	250-800	900-3600	0.5-3.6
40	500-2700	250-800	1000-4300	0.5-3.4
45	500-3000	250-750	1000-4500	0.3-3.0
50	600-2500	300-750	1200-4000	0.3-2.5
54	600-2500	300-750	1200-4000	0.3-3.0